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HCS20MS - Radiation Hardened Dual 4-Input NAND Gate

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Intersil Corporation

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HCS20MS Radiation Hardened Dual 4-Input NAND Gate by Intersil Corporation - Datasheet Preview — Datasheet preview – HCS20MS

Datasheet Details

Part number	HCS20MS
Manufacturer	Intersil Corporation
File Size	179.29 KB
Description	Radiation Hardened Dual 4-Input NAND Gate
Datasheet	HCS20MS Datasheet
Additional preview pages of the HCS20MS datasheet.

Product details

Description

The Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

Features

3 Micron Radiation Hardened SOS CMOS.
Total Dose 200K RAD (Si).
SEP Effective LET No Upsets: >100 MEV-cm2/mg.
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
Latch-Up Free Under Any Conditions.
Military Temperature Range: -55oC to +125oC.
Signiﬁcant Power Reduction Compared to LSTTL ICs.
DC Operat.

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Other Datasheets by Intersil Corporation

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Published: Mar 23, 2005 |