* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >101
HCS241MS Datasheet (169.92 KB)
HCS241MS
Intersil Corporation
169.92 KB
Radiation hardened inverting octal three-state buffer/line driver.
HCS241MS September 1995 Radiation Hardened Inverting Octal Three-State Buffer/Line Driver Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SB.
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