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HCS241MS - Radiation Hardened Inverting Octal Three-State Buffer/Line Driver

Datasheet Summary

Description

The Intersil HCS241MS is a Radiation Hardened inverting octal three-state buffer/line driver with two output enables, one active low, and one active high.

The HCS241MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse.
  • Latch Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Op.

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Datasheet preview – HCS241MS

Datasheet Details

Part number HCS241MS
Manufacturer Intersil Corporation
File Size 169.92 KB
Description Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Datasheet download datasheet HCS241MS Datasheet
Additional preview pages of the HCS241MS datasheet.

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Full PDF Text Transcription

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HCS241MS September 1995 Radiation Hardened Inverting Octal Three-State Buffer/Line Driver Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW AE AI1 BO4 AI2 BO3 AI3 BO2 AI4 1 2 3 4 5 6 7 8 9 20 VCC 19 BE 18 AO1 17 BI4 16 AO2 15 BI3 14 AO3 13 BI2 12 AO4 11 BI1 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/Sec. 20ns Pulse • Latch Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.
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