HCS10MS
Description
The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state.
Key Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse
- Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction pared to LSTTL ICs
