HCS10MS Datasheet | Intersil

DATASHEET HCS10MS Radiation Hardened Triple 3-Input NAND Gate FN2435 Rev 0.00 September 1995 Features - 3 Micron Radiation Hardened SOS CMOS - Total Dose 200K RAD (Si) - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) - Dose Rate Survivability: >1 x 1012 RAD (Si)/s - Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse - Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) - Latch-Up Free Under Any Conditions - Military Temperature Range: -55oC to +125oC - Significant Power Reduction pared to LSTTL ICs - DC Operating Voltage Range: 4.5V to 5.5V - Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min - Input Current Levels Ii  5A at VOL, VOH Description The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS10MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE SCREENING RANGE...