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HCS11MS - Radiation Hardened Triple 3-Input AND Gate

General Description

The Intersil HCS11MS is a Radiation Hardened Triple 3Input AND Gate.

A high on all inputs forces the output to a High state.

The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K or 1 Mega-RAD(Si).
  • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse.
  • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ).
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Operating Voltage Range: 4.5V to 5.5V.
  • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCS11MS Radiation Hardened Triple 3-Input AND Gate Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 Mega-RAD(Si) • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current Levels Ii  5A at VOL, VOH Description The Intersil HCS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.