HCS11MS Datasheet | Intersil

HCS11MS Radiation Hardened Triple 3-Input AND Gate Features - 3 Micron Radiation Hardened SOS CMOS - Total Dose 200K or 1 Mega-RAD(Si) - Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse - Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) - Latch-Up Free Under Any Conditions - Military Temperature Range: -55oC to +125oC - Significant Power Reduction pared to LSTTL ICs - DC Operating Voltage Range: 4.5V to 5.5V - Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min - Input Current Levels Ii  5A at VOL, VOH Description The Intersil HCS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state. The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix). DATASHEET FN3048 Rev 0.00 November 1994 Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 14 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 A2 B2 C2 Y2 GND...