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HCS12NK65V - N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 32 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ. ) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volta.

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Datasheet Details

Part number HCS12NK65V
Manufacturer SemiHow
File Size 418.47 KB
Description N-Channel MOSFET
Datasheet download datasheet HCS12NK65V Datasheet

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HCS12NK65V Apr 2014 HCS12NK65V 650V N-Channel Super Junction MOSFET BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 32 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : ȍ(Typ.) @VGS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3.