Datasheet Summary
Apr 2014
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS pliant
TO-220F
12 3
1.Gate 2. Drain 3....