Datasheet Summary
Apr 2014
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7S#9GS=10V 100% Avalanche Tested RoHS pliant
TO-220F
12 3
1.Gate 2. Drain 3....