HCS50R150V - 500V N-Channel Super Junction MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.15 ȍ(Typ. ) @VGS=10V 100% Avalanche Tested RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volta.

HCS50R150V 500v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCS50R150V
Manufacturer	SemiHow
File Size	306.00 KB
Description	500V N-Channel Super Junction MOSFET
Datasheet	HCS50R150V Datasheet

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HCS50R150V July 2014 HCS50R150V 500V N-Channel Super Junction MOSFET BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID = 22 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.15 ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant TO-220F 12 3 1.Gate 2. Drain 3.