Datasheet Summary
July 2014
500V N-Channel Super Junction MOSFET
BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID = 22 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.15 ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS pliant
TO-220F
12 3
1.Gate 2. Drain 3....