Datasheet Summary
HCS60R092E Super Junction MOSFET
July 2016
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 40 92 45
Unit V A Pȍ nC
Application
PC Power Server Power Supply Tele Solar Inverter Super Charger for Automobiles
Package & Internal Circuit
TO-220F...