HGTH12N50E1 igbt equivalent, n-channel igbt.
* 10A and 12A, 400V and 500V
* VCE(ON): 2.5V Max.
* TFI: 1µs, 0.5µs
* Low On-State Voltage
* Fast Switching Speeds
* High Input Impedance
* No.
HGTP-TYPES JEDEC TO-220AB
* Power Supplies
* Motor Drives
* Protection Circuits
COLLECTOR (FLANGE)
EMITTER.
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as.
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