HGTP10N50C1D igbt equivalent, n-channel igbt.
* 10A, 400V and 500V
* VCE(ON): 2.5V Max.
* TFALL: 1µs, 0.5µs
* Low On-State Voltage
* Fast Switching Speeds
* High Input Impedance
* Anti-Par.
* Power Supplies
* Motor Drives
* Protective Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
Descri.
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They f.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 37.02KB)