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HGTP1N120BND Datasheet, Intersil Corporation

HGTP1N120BND igbt equivalent, n-channel igbt.

HGTP1N120BND Avg. rating / M : 1.0 rating-16

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HGTP1N120BND Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is develop.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

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