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HGTP20N35G3VL - N-Channel IGBT

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits.

Features

  • Logic Level Gate Drive.
  • Internal Voltage Clamp.
  • ESD Gate Protection.
  • TJ = 175oC.
  • Ignition Energy Capable.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS April 1995 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
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