* 8.1A and 6.5A, 275V and 250V
* rDS(ON) = 0.45Ω and 0.68Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switc.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF230

IRF231

IRF232

IRF233

IRF234

IRF235

IRF236

IRF200

IRF200B211

IRF200P222

IRF200P223

IRF200S234

IRF220