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IRFF310 - N-Channel Power MOSFET

Features

  • 1.35A, 400V.
  • rDS(ON) = 3.600Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFF310.

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Datasheet preview – IRFF310

Datasheet Details

Part number IRFF310
Manufacturer Intersil Corporation
File Size 326.14 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRFF310 Datasheet
Additional preview pages of the IRFF310 datasheet.

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Full PDF Text Transcription

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IRFF310 Data Sheet March 1999 File Number 1888.3 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17444. Features • 1.35A, 400V • rDS(ON) = 3.
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