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IRFU410 - N-Channel Power MOSFETs

Download the IRFU410 datasheet PDF. This datasheet also covers the IRFR410 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1.5A, 500V.
  • rDS(ON) = 7.000Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • High Input Impedance.
  • 150oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFU410 IRFR410.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR410_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU410 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs Intersil
IRFU4104 Power MOSFET International Rectifier
IRFU4104 N-Channel MOSFET INCHANGE
IRFU4104PbF Power MOSFET International Rectifier
IRFU4105 N-Channel MOSFET INCHANGE

Other Datasheets by Intersil (Renesas)

Part Number Description
IRFU420 N-Channel Power MOSFETs
IRFU110 N-Channel Power MOSFETs
IRFU120 N-Channel Power MOSFETs
IRFU214 N-Channel Power MOSFETs
IRFU220 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17445. Features • 1.5A, 500V • rDS(ON) = 7.