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JANSR2N7402 - 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET

Datasheet Summary

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

  • 3A, 500V, rDS(ON) = 2.70Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 8.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Speci.

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Datasheet Details

Part number JANSR2N7402
Manufacturer Intersil Corporation
File Size 45.62 KB
Description 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
Datasheet download datasheet JANSR2N7402 Datasheet
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Full PDF Text Transcription

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JANSR2N7402 Formerly FSS430R4 June 1998 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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