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JANSR2N7402 Datasheet 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

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General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Overview

JANSR2N7402 Formerly FSS430R4 June 1998 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power.

Key Features

  • 3A, 500V, rDS(ON) = 2.70Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 8.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Speci.

More Datasheets from Intersil (now Renesas)

Part Number Description
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7401 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7404 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7405 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7406 24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7407 Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
JANSR2N7408 Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
JANSR2N7410 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7411 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET