JANSR2N7410 - 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

Product Overview

Intersil Corporation

Datasheet Details

Part number	JANSR2N7410
Manufacturer	Intersil Corporation
File Size	45.49 KB
Description	3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
Datasheet	JANSR2N7410 Datasheet
Additional preview pages of the JANSR2N7410 datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

3.5A, 100V, rDS(ON) = 0.600Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 0.3nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Sp.

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Other Datasheets by Intersil Corporation

JANSR2N7411 - 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7400 - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7401 - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7402 - 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7403 - 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7404 - 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET

Published: Apr 7, 2005 |