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JANSR2N7411 - 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET

Description

The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

  • 2.5A, -100V, rDS(ON) = 1.30Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 0.3nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Sp.

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Other Datasheets by Intersil (Renesas)

Part Number Description
JANSR2N7410 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7401 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7402 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET

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JANSR2N7411 Formerly FSL9110R4 June 1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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