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Intersil Electronic Components Datasheet

JANSR2N7411 Datasheet

2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET

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JANSR2N7411
Formerly FSL9110R4
June 1998
2.5A, -100V, 1.30 Ohm, Rad Hard,
P-Channel Power MOSFET
Features
• 2.5A, -100V, rDS(ON) = 1.30
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
JANSR2N7411
PACKAGE
TO-205AF
Die Family TA17716.
MIL-PRF-19500/639.
BRAND
JANSR2N7411
Description
The Discrete Products Operation of Intersil Corporationhas
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com. Con-
tact your local Intersil Sales Office for additional information.
Symbol
D
Package
TO-205AF
G
S
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-100
File Number 4493


Intersil Electronic Components Datasheet

JANSR2N7411 Datasheet

2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET

No Preview Available !

JANSR2N7411
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
JANSR2N7411
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-100
-100
2.5
1.5
7.5
±20
15
6
0.12
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
7.5
2.5
7.5
-55 to 150
300
A
A
A
oC
oC
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = -80V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VDS(ON)
rDS(ON)12
VGS = -12V, ID = 2.5A
ID = 1.5A,
VGS = -12V
TC = 25oC
TC = 125oC
td(ON)
tr
td(OFF)
VDD = -50V, ID = 2.5A,
RL = 20, VGS = -12V,
RGS = 7.5
tf
Qg (TOT)
Qg (12)
VGS = 0V to -20V VDD = -50V,
VGS = 0V to -12V ID = 2.5A
Qg(TH) VGS = 0V to -2V
Qgs
Qgd
RθJC
RθJA
MIN TYP MAX UNITS
-100
-
-V
- - -7.0 V
-2.0 - -6.0 V
-1.0 -
-V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - -3.58 V
-
1.00 1.30
- - 2.16
- - 20 ns
- - 45 ns
- - 40 ns
- - 45 ns
- - 14 nC
- 7.0 7.9 nC
- - 0.64 nC
- 1.9 2.1 nC
- 3.4 3.8 nC
- - 8.3 oC/W
- - 175 oC/W
2-101


Part Number JANSR2N7411
Description 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
Maker Intersil Corporation
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JANSR2N7411 Datasheet PDF






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2 JANSR2N7411 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET
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