RF1S9630SM Description
IRF9630, RF1S9630SM Data Sheet July 1999 File Number 2224.3 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching...
RF1S9630SM Key Features
- 6.5A, 200V
- rDS(ON) = 0.800Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”