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RFH10N50 - N-Channel Power MOSFET

Features

  • 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate.
  • rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed for.

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RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Features • 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω (RFH10 power field effect transistors designed for applications such • Related Literature as switching regulators, switching converters, motor drivers, N45, - TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching RFH10N Components to PC Boards” transistors requiring high speed and low gate drive power. 50) These types can be operated directly from integrated circuits. /Subject Symbol Formerly developmental type TA17435.
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