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Intersil Electronic Components Datasheet

RFM18N10 Datasheet

18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs

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RFM18N10 pdf
Semiconductor
September 1998
RFM18N08, RFM18N10,
RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N
10)
/Subject
(18A,
80V and
100V,
0.1 Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 18A, 80V and 100V
• rDS(ON) = 0.100
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM18N08
TO-204AA
RFM18N08
RFM18N10
TO-204AA
RFM18N10
RFP18N08
TO-220AB
RFP18N08
RFP18N10
TO-220AB
RFP18N10
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17421.
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1446.1


Intersil Electronic Components Datasheet

RFM18N10 Datasheet

18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFM18N10 pdf
RFM18N08, RFM18N10, RFP18N08, RFP18N10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg
80
80
18
45
±20
100
0.8
-55 to 150
300
260
100
100
18
45
±20
100
0.8
-55 to 150
300
260
80
80
18
45
±20
75
0.6
-55 to 150
300
260
100
100
18
45
±20
75
0.6
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
RFM18N08, RFP18N08
BVDSS ID = 250µA, VGS = 0V
80
RFM18N10, RFP18N10
100
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
IGSS VGS = ±20V, VDS = 0V
rDS(ON) ID = 18A, VGS = 10V, (Figures 6, 7)
VDS(ON) ID = 18A, VGS = 10V
td(ON)
tr
td(OFF)
VDD = 50V, ID 9A, RG = 50, VGS = 10V,
RL = 5.5
(Figures 10, 11, 12)
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz,
(Figure 9)
CRSS
RθJC RFM18N08, RFM18N10
RFP18N08, RFP18N10
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
--V
-4V
- 1 µA
- 25 µA
- ±100 nA
- 0.100
- 1.8 V
60 90 ns
300 450 ns
150 225 ns
150 225 ns
- 1700 pF
- 750 pF
- 300 pF
- 1.25 oC/W
- 1.67 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 9A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 150 - ns
5-2


Part Number RFM18N10
Description 18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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