RFM4N35 Datasheet | Intersil

Features - 4A, 350V and 400V - r DS(ON) = 2.000Ω - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” [ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect transistors designed for applications such 35, as switching regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated RFP4N3 r () circuits. 5, /Key RFP4N4 Formerly developmental type TA17404. words 0) () Ordering Information /Subject /Cre PART NUMBER PACKAGE BRAND (4A, ator () RFM4N35 TO-204AA RFM4N35 350V /DOCI RFM4N40 TO-204AA RFM4N40 and NFO RFP4N35 TO-220AB RFP4N35 400V, pdf RFP4N40 TO-220AB RFP4N40 2.000 mark NOTE: When ordering, use the entire part number. Ohm, NChannel [ Power /Page- Packaging MOSMode JEDEC TO-204AA FETs) /Use/Author Out DRAIN () lines (FLANGE) /Key/DOCwords VIEW (Harris pdf Semimark conduc SOURCE (PIN 2) tor, NGATE (PIN 1) Channel Power MOSFETs, TO204AA, TO220AB) /Creator () Symbol JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM4N35, RFM4N40, RFP4N35, RFP4N40 TC = 25o C Unless Otherwise Specified RFM4N35 350 Drain to Source Voltage (Note 1) - - - - - . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) - - - VDGR 350 Continuous Drain Current - - - - - - . . . .ID 4 Pulsed Drain Current (Note 3) - - - - - . . . . IDM 8 Gate to Source Voltage - - - - - - . . . . VGS ±20 Maximum Power Dissipation - - - - - - . PD 75...