datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Intersil Electronic Components Datasheet

RFP15N06L Datasheet

15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs

No Preview Available !

RFP15N06L pdf
Data Sheet
RFP15N05L, RFP15N06L
July 1999 File Number 1558.3
15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA0522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP15N05L
TO-220AB
RFP15N05L
RFP15N06L
TO-220AB
RFP15N06L
NOTE: When ordering, use the entire part number.
Features
• 15A, 50V and 60V
• rDS(ON) = 0.140
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
6-229
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP15N06L Datasheet

15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs

No Preview Available !

RFP15N06L pdf
RFP15N05L, RFP15N06L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . .
Above TC = 25oC, Derate Linearly
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP15N05L
50
50
15
40
±10
60
0.48
-55 to 150
RFP15N06L
60
60
15
40
±10
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/oC
oC
300 300 oC
260 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP15N05L
BVDSS ID = 250µA, VGS = 0V
RFP15N06L
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(TH)
IDSS
IGSS
rDS(ON)
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
RθJC
VGS = VDS, ID = 250µA (Figure 7)
VDS = 48V, VDS = 50V
VDS = 48V, VDS = 50V
TC = 125oC
VGS = ±10V, VDS = 0V
ID = 15A, VGS = 5V (Figures 5, 6)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 8)
VDD = 30V, ID = 7.5A, RG = 6.25
(Figures 10, 11)
VGS = 5V
RFP15N05L, RFP15N06L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 7.5A
Diode Reverse Recovery Time
trr ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-230
MIN TYP MAX UNITS
50 - - V
60 - - V
1-2V
- - 1 µA
- - 50 µA
- - 100 nA
- - 0.140
- - 900 pF
- - 450 pF
- - 200 pF
- 16 40 ns
-
250 325
ns
-
200 325
ns
-
225 325
ns
- - 2.083 oC/W
MIN TYP MAX UNITS
- - 1.4 V
- 225 -
ns


Part Number RFP15N06L
Description 15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
PDF Download
RFP15N06L pdf
RFP15N06L Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 RFP15N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
New Jersey Semiconductor
RFP15N06 pdf
2 RFP15N06L 15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
RFP15N06L pdf
3 RFP15N06L 15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP15N06L pdf
4 RFP15N06L Trans MOSFET N-CH 60V 15A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
New Jersey Semiconductor
RFP15N06L pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy