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Intersil Electronic Components Datasheet

RFP3055 Datasheet

12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs

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Data Sheet
RFD3055, RFD3055SM, RFP3055
July 1999 File Number 3648.2
12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3055
TO-251AA
FD3055
RFD3055SM
TO-252AA
FD3055
RFP3055
TO-220AB
FP3055
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 12A, 60V
• rDS(ON) = 0.150
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP3055 Datasheet

12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFD3055, RFD3055SM, RFP3055
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
±20
12
Refer to Peak Current Curve
Refer to UIS Curve
53
0.357
-55 to 175
300
260
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = Rated BVDSS, VGS = 0V
TC = 125oC, VDS = 0.8 x Rated BVDSS
VGS = ±20V
ID = 12A, VGS = 10V (Figure 9) (Note 2)
VDD = 30V, ID = 12A
RL = 2.5, VGS = +10V
RG = 10
(Figure 13)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V,ID = 12A,
RL = 4Ω,
Ig(REF) = 0.24mA
(Figure 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 12)
TO-251 and TO-252
TO-220
MIN TYP MAX UNITS
60 - - V
2-4
V
- - 1 µA
- - 25 µA
- - 100 nA
- - 0.150
- - 40 ns
- 7 - ns
- 21 -
ns
- 16 -
ns
- 10 -
ns
- - 40 ns
- 19 23 nC
- 10 12 nC
- 0.6 0.8 nC
- 300 -
pF
- 100 -
pF
- 30 -
pF
- - 2.8 oC/W
- - 100 oC/W
-
-
62.5
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 12A
- - 1.5 V
Reverse Recovery Time
trr ISD = 12A, dISD/dt = 100A/µs
- - 100 ns
NOTES:
2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-436


Part Number RFP3055
Description 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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