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Intersil Electronic Components Datasheet

RFP50N05L Datasheet

50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs

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Data Sheet
RFG50N05L, RFP50N05L
July 1999 File Number 2424.3
50A, 50V, 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs
These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05L
TO-247
RFG50N05L
RFP50N05L
TO-220AB
RFP50N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 50A, 50V
• rDS(ON) = 0.022
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-212
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP50N05L Datasheet

50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs

No Preview Available !

RFG50N05L, RFP50N05L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . .
Above TC = 25oC, Derate Linearly
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PD
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Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG50N05L
RFP50N05L
50 50
50 50
50 50
130 130
±10 ±10
110 110
0.88 0.88
Refer to UIS SOA Curve
-55 to 150
-55 to 150
300 300
260 260
UNITS
V
V
A
A
V
W
W/oC
-
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
tD(ON)
tr
tD(OFF)
tf
t(OFF)
QG(TOT)
QG(5)
QG(th)
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA (Figure 9)
VDS = Rated BVDSS, VGS = 0
VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC
VGS = ±10V, VDS = 0V
ID = 50A, VGS = 5V (Figure 7)
ID = 50A, VGS = 4V
VGS = 5V, RGS = 2.5, RL = 1
(Figures 12, 15, 16)
VGS = 0 to 10V
VGS = 0 to 5V
VGS = 0 to 1V
VDD = 40V, ID = 50A
RL = 0.8
(Figures 17, 18)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 50A
Diode Reverse Recovery Time
trr ISD = 50A, dISD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
-
-
MIN TYP MAX UNITS
50 - - V
1-2V
- - 25 µA
- - 250 µA
- - ±100 nA
- - 0.022
- - 0.027
- - 100 ns
- 15 -
ns
- 50 -
ns
- 50 -
ns
- 15 -
ns
- - 100 ns
- - 140 nC
- - 80 nC
- - 6 nC
- - 1.14 oC/W
- - 80 oC/W
TYP MAX UNITS
- 1.5 V
- 1.25 ns
6-213


Part Number RFP50N05L
Description 50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 6 Pages
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