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Intersil Electronic Components Datasheet

RLP1N06CLE Datasheet

1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET

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RLP1N06CLE pdf
Data Sheet
RLP1N06CLE
July 1999 File Number 2839.4
1A, 55V, 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET
The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.
Formerly developmental type TA09880.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N06CLE
TO-220AB
L1N06CLE
NOTE: When ordering, use the entire part number.
Features
• 1A, 55V
• rDS(ON) = 0.750
• ILIMIT at 150oC = 1.1A to 1.5A Maximum
• Built-in Voltage Clamp
• Built-in Current Limiting
• ESD Protected, 2kV Minimum
• Controlled Switching Limits EMI and RFI
• 175oC Rated Junction Temperature
• Logic Level Gate
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
S
6-428
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RLP1N06CLE Datasheet

1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET

No Preview Available !

RLP1N06CLE pdf
RLP1N06CLE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20k, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Electrostatic Voltage at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RLP1N06CLE
55
55
2
Self Limited
5.5
36
0.24
-55 to 175
300
260
UNITS
V
V
kV
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Limiting Current
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Electrostatic Voltage
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
IDS(LIM)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
RθJC
RθJA
ESD
ID = 20mA, VGS = 0V (Figure 7)
VGS = VDS, ID = 250µA (Figure 8)
VDS = 45V, VGS = 0V TC = 25oC
TC = 150oC
VGS = 5V
ID = 1A, VGS = 5V
(Figure 6)
VDS = 15V, VGS = 5V
(Figure 2)
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
VDD = 30V, ID = 1A, VGS = 5V, RGS = 25
RL = 30
TO-220AA
Human Model (100pF, 1.5k)
MIL-STD-883B (Category B2)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Reverse Recovery Time
trr ISD = 1A
NOTES:
2. Pulsed: pulse duration = 80µs maximum, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
55
1
-
-
-
-
-
-
1.8
0.9
-
-
1
-
1
-
-
-
2000
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
70
2.5
5
20
5
20
0.750
1.500
3
1.5
6.5
1.5
5
7.5
5
12.5
4.17
62
-
UNITS
V
V
µA
µA
µA
µA
A
A
µs
µs
µs
µs
µs
µs
oC/W
oC/W
V
MIN TYP MAX UNITS
- - 1.5 V
- - 1 ms
6-429


Part Number RLP1N06CLE
Description 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 7 Pages
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