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JCET

2SK1658 Datasheet Preview

2SK1658 Datasheet

N-Channel MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK1658 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
  10Ω@4V 
15Ω@2.5V  
ID
100mA
SOT-323
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for
Portable equipment
z Easily designed drive circuits
z Easy to parallel
MARKING
APPLICATION
z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
PD Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
RθJA Thermal Resistance from Junction to Ambient
Value
30
±7
0.1
0.2
150
-55-150
625
Unit
V
V
A
W
/W
www.cj-elec.com
1
B,Apr,2015




JCET

2SK1658 Datasheet Preview

2SK1658 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Cut-off Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol Test Condition
V(BR)DSS VGS = 0V, ID = 10µA
IDSS VDS =30V,VGS = 0V
IGSS VGS =±3V, VDS = 0V
VGS(off)
VDS = 3V, ID =1µA
RDS(on)
VGS = 4V, ID =10mA
VGS =2.5V,ID =10mA
gFS VDS =3V, ID = 10mA
Ciss
Coss
Crss
VDS =3V,VGS =0V,f =1MHz
td(on)
tr
td(off)
tf
VGS =3V, VDD =3V,
ID =10mA, Rg=10, RL=300
*These parameters have no way to verify.
Min Typ Max Unit
30 V
1 µA
±1 µA
0.9 1.5 V
10
15
20 mS
15 pF
10 pF
1.5 pF
50 ns
23 ns
34 ns
43 ns
www.cj-elec.com
2
B,Apr,2015


Part Number 2SK1658
Description N-Channel MOSFET
Maker JCET
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2SK1658 Datasheet PDF






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