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JCET

2SK3019 Datasheet Preview

2SK3019 Datasheet

N-Channel MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2SK3019 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
 8Ω@4V 
13Ω@2.5V  
ID
100mA
SOT-523
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for
Portable equipment
z Easily designed drive circuits
z Easy to parallel
MARKING
APPLICATION
z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID Continuous Drain Current
RθJA
Thermal Resistance, Junction-to-Ambient
PD Power Dissipation
TJ Junction Temperature
Tstg
Storage Temperature
Value
30
±20
0.1
833
0.15
150
-55~+150
Unit
V
V
A
/W
W
www.cj-elec.com
1
D,Apr,2015




JCET

2SK3019 Datasheet Preview

2SK3019 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Symbol
VDS
IDSS
IGSS
VGS(th)
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
* These parameters have no way to verify.
Test Condition
VGS = 0V, ID = 10µA
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
VDS =5V,VGS =0V,f =1MHz
VGS =5V, VDD =5V,
ID =10mA, Rg=10, RL=500,
Min Typ Max Units
30 V
1 µA
±2 µA
0.8 1.5 V
8
13
20 mS
13 pF
9 pF
4 pF
15 ns
35 ns
80 ns
80 ns
www.cj-elec.com
2
D,Apr,2015


Part Number 2SK3019
Description N-Channel MOSFET
Maker JCET
PDF Download

2SK3019 Datasheet PDF






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