MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Symbol
VDS
IDSS
IGSS
VGS(th)
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
* These parameters have no way to verify.
Test Condition
VGS = 0V, ID = 10µA
VDS =30V,VGS = 0V
VGS =±20V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
VDS =5V,VGS =0V,f =1MHz
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω,
Min Typ Max Units
30 V
1 µA
±2 µA
0.8 1.5 V
8Ω
13 Ω
20 mS
13 pF
9 pF
4 pF
15 ns
35 ns
80 ns
80 ns
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2
D,Apr,2015
