Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK3018 N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
100mA
SOT-323
1. GATE 2. SOURCE 3. DRAIN
FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for
Portable equipment z Easily designed drive circuits z Easy to parallel
MARKING
APPLICATION z Interfacing , Switching
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol VDS VGS ID PD TJ
Parameter
Drain-Source voltage
Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature
Tstg RθJA
Storage Temperature Thermal Resistance...
