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JCET

2SK3541 Datasheet Preview

2SK3541 Datasheet

N-Channel MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate MOSFETS
2SK3541
V(BR)DSS
30 V
N-Channel MOSFET
RDS(on)MAX
 8Ω@4V 
13Ω@2.5V  
ID
100mA
SOT-723
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z Low on-resistance
z Fast switching speed
z Low voltage drive makes this device ideal for
Portable equipment
z Drive circuits can be simple
z Parallel use is easy
MARKING
APPLICATION
z Interfacing , Switching
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
* Pw10µs ,Duty cycle1%
Symbol
VDS
VGS
ID
PD
RθJA
TJ
Tstg
Value
30
±20
±100
0.15
833
150
-55 ~+150
Unit
V
mA
W
/W
www.cj-elec.com
1
F,Apr,2015




JCET

2SK3541 Datasheet Preview

2SK3541 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Drain-source breakdown voltage
V(BR) DSS
Gate-source leakage current
IGSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS(th)
Static drain-source on-state resistance
RDS(on)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Test Condition
VGS = 0V, ID =10µA
VDS =0V, VGS =±20V
VDS =30V, VGS =0V
VDS =3V, ID =100µA
VGS =4V, ID =10mA
VGS =2.5V, ID =1mA
VDS =3V, ID =10mA
VDS =5V,VGS =0V,f =1MHz
VGS=5V,VDD=5V, ID =10mA
RL=500,RG=10
Min Typ Max Unit
30 V
±2 µA
1.0 µA
0.8 1.5 V
58
7 13
20 mS
13
9 pF
4
15
35
ns
80
80
www.cj-elec.com
2
F,Apr,2015


Part Number 2SK3541
Description N-Channel MOSFET
Maker JCET
PDF Download

2SK3541 Datasheet PDF






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