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BAS40W Datasheet Preview

BAS40W Datasheet

SCHOTTKY BARRIER DIODE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
SOT-323
BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
BAS40W MARKING: 43•
MARKING:
BAS40W
BAS40W-06 MARKING: 46 BAS40W-05 MARKING45 BAS40W-04 MARKING44
BAS40W-06
BAS40W-05
BAS40W-04
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25
Parameter
Symbol
Limit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
VRRM
VRWM
VR
IFM
40
200
Power dissipation
PD 150
Thermal resistance junction to ambient
RθJA
667
Junction temperature
TJ 125
Storage temperature range
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CD
t rr
Test conditions
IR= 10μA
VR=30V
IF=1mA
IF=40mA
VR=0,f=1MHz
Irr=1mA, IR=IF=10mA
RL=100
Min
40
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1
Unit
V
mA
mW
/W
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
D,Oct,2015




JCET

BAS40W Datasheet Preview

BAS40W Datasheet

SCHOTTKY BARRIER DIODE

No Preview Available !

Typical Characteristics
Forward Characteristics
200
100
10
1
0.1
0.01
0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V)
F
1.0
100
10
1
0.1
0.01
1E-3
0
Reverse Characteristics
T =100
a
T =25
a
10 20 30
REVERSE VOLTAGE V (V)
R
40
Capacitance Characteristics
4
T =25
a
f=1MHz
3
2
1
0
0 5 10 15 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE T ()
a
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2
D,Oct,2015


Part Number BAS40W
Description SCHOTTKY BARRIER DIODE
Maker JCET
Total Page 4 Pages
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