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JCET

BAT54ST Datasheet Preview

BAT54ST Datasheet

SCHOTTKY BARRIER DIODE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAT54T/AT/CT/ST SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z PN Junction Guard Ring for Transient and ESD Protection
BAT54T
BAT54AT
BAT54CT
BAT54ST
SOT-523
MARKING:
BA77
BA7$7
BA7&7
BA767
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
Value
VRRM
VRWM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
30
VR(RMS)
RMS Reverse Voltage
21
IO Average Rectified Output Current
0.2
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
600
IFRM Repetitive Peak Forward Surge Current @ t1s;δ≤0.5 300
PD Power Dissipation
150
RΘJA
Thermal Resistance from Junction to Ambient
667
Tj Junction Temperature
125
Tstg Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
Reverse current
V(BR)
IR
IR=100μA
VR=25V
IF=1mA
30
Forward voltage
IF=10mA
VF
IF=30mA
IF=100mA
Total capacitance
Reverse recovery time
Ctot VR=1V,f=1MHz
trr IF= IR=10mA, Irr=0.1×IR, RL=100
Unit
V
V
A
mA
mA
mW
/W
Typ Max
2
0.32
0.4
0.5
1
10
5
Unit
V
μA
V
pF
ns
www.cj-elec.com
1
F,Oct,2015




JCET

BAT54ST Datasheet Preview

BAT54ST Datasheet

SCHOTTKY BARRIER DIODE

No Preview Available !

Typical Characteristics
Forward Characteristics
100
10
1
0.1
0
200 400 600
FORWARD VOLTAGE VF (mV)
Capacitance Characteristics
20
Ta=25
f=1MHz
15
10
5
0
0 5 10 15 20
REVERSE VOLTAGE VR (V)
Reverse Characteristics
100
10
Ta=100
1
Ta=25
0.1
0.01
0
10 20
REVERSE VOLTAGE VR (V)
30
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
www.cj-elec.com
2
F,Oct,2015


Part Number BAT54ST
Description SCHOTTKY BARRIER DIODE
Maker JCET
Total Page 4 Pages
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