2.
3.
Power Trench process to optimize the RDS(ON).
High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed ESD protected MARKING APPLICATIONS Drivers:R| Part number | CJ1012 |
|---|---|
| Manufacturer | JCET |
| File Size | 1.07 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 CJ1012 Datasheet
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ZPSEMI | CJ1012 | N-Channel Power MOSFET | ZPSEMI |
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CJ1012-G | MOSFET | Comchip |
| Part Number | Description |
|---|
Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJ1012. For precise diagrams, tables, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET V(BR)DSS 20 V RDS(on)MAX 700mΩ@4.5V 850mΩ@2.5V ID 500...
