ZPSEMI CJ1012
This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON).| Part No. | CJ1012 |
|---|---|
| Datasheet | CJ1012 Download |
| Manufacturer | ZPSEMI |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURE● High-Side Switching
● Low On-Resistance
● Low Threshold
● Fast Switching Speed
● ESD protected up to 2KV SOT-523 1. GATE 2. SOURCE 3. DRAIN
APPLICATIONS
● Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories● Battery Operated Systems
● Power Supply Converter Circuits
● Load/Power Switching Cell Phones, Pagers Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case Storage Temperature Junction Temperature Symbol VDSS VGS ID(DC) IDM(pulse) PD RθJA RθJC Tj Tstg Value 20 ±12 500 10
