CJ1012 - N-Channel MOSFET

Datasheet Summary

Description

Power Trench process to optimize the RDS(ON).

High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed ESD protected MARKING APPLICATIONS Drivers:R

JCET

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Datasheet Details

Part number	CJ1012
Manufacturer	JCET
File Size	1.07 MB
Description	N-Channel MOSFET
Datasheet	CJ1012 Datasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET V(BR)DSS 20 V RDS(on)MAX 700mΩ@4.5V 850mΩ@2.5V ID 500mA SOT-523 3 1. GATE General Description 2. SOURCE This Single N-Channel MOSFET has been designed using advanced 3. DRAIN 1 2 Power Trench process to optimize the RDS(ON). FEATURE  High-Side Switching  Low On-Resistance  Low Threshold  Fast Switching Speed  ESD protected MARKING APPLICATIONS  Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Equivalent Circuit C= Device Code Solid dot = Green molding compound device,if none, the normal device.

Published: Dec 19, 2016 |