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CJ8820 - Dual N-Channel MOSFET

General Description

The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

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Datasheet Details

Part number CJ8820
Manufacturer JCET
File Size 972.33 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CJ8820 Datasheet

Full PDF Text Transcription for CJ8820 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJ8820. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 21mΩ@10V 24mΩ@4.5V 20V 28mΩ@3.8V...

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Channel MOSFET V(BR)DSS RDS(on)MAX ID 21mΩ@10V 24mΩ@4.5V 20V 28mΩ@3.8V 7A 32mΩ@2.5V 50mΩ@1.8V DESCRIPTION The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING SOT-23 1. GATE 2. SOURCE 3.