Datasheet Summary
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION The CJ8820 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its mon-drain configuration.
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Continuous drain current (t ≤10s)
Pulsed drain current
- IDM
Power dissipation
Thermal resistance from junction to ambient
RθJA
Junction temperature
Storage...
