Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
21mΩ@10V
24mΩ@4.5V
20V
28mΩ@3.8V
7A
32mΩ@2.5V
50mΩ@1.8V
DESCRIPTION
The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its mon-drain configuration.
MARKING
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance...