Datasheet Details
| Part number | CJA9451 |
|---|---|
| Manufacturer | JCET |
| File Size | 745.77 KB |
| Description | P-Channel MOSFET |
| Download | CJA9451 Download (PDF) |
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| Part number | CJA9451 |
|---|---|
| Manufacturer | JCET |
| File Size | 745.77 KB |
| Description | P-Channel MOSFET |
| Download | CJA9451 Download (PDF) |
|
|
|
The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness.
MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol VDS VGS ID PD RθJA Tj Tstg Value -20 ±12 -2.3 0.5 250 150 -55 ~+150 Unit V A W ℃/W ℃ www.cj-elec.com 1 E,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Off characteristics Drain-source breakdown voltage V(BR)DSS Gate-body leakage IGSS Zero gate voltage drain current IDSS On characteristics Gate-threshold voltage VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gfs Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics Turn-on delay time (note 1,2) td(on) Rise time (note 2) tr Turn-off delay time (note 2) td(off) Fall time (note 2) tf Drain-source body diode characteristics Body diode forward voltage (note 1) VSD No tes: 1.
Pulse Test ;
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 V(BR)DSS -20 V P-Channel 20-V(D-S) MOSFET RDS(on)MAX 135mΩ@-4.5V 240mΩ@-2.5V ID -2.3A SOT-89-3L 1.
GATE 2.
DRAIN 3.
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