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CJA03N10 - N-Channel MOSFET

Datasheet Summary

Description

The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications.

1.

GATE 2.

Features

  • z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation.

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Datasheet Details

Part number CJA03N10
Manufacturer JCET
File Size 726.35 KB
Description N-Channel MOSFET
Datasheet download datasheet CJA03N10 Datasheet
Additional preview pages of the CJA03N10 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 14  0mΩ@ 10V  ID 3A SOT-89-3L DESCRIPTION The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE 2. DRAIN 3.
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