-Special process technology for high ESD capability. -High density cell design for extremely low RDS(ON). -Good stability and uniformity with high EAS. -Excellent package for good heat dissipation. 1 : Gate 2 : Drain 3 : Source
SOT-89-3L
0.181(4.60) 0.173(4.40)
0.061(1.55) REF. 0.102(2.60) 0.091(2.30)
123
0.167(4.25) 0.155(3.94)
Circuit Diagram
D
G S
0.020(0.52) 0.013(0.32)
0.060(1.50) TYP. 0.023(0.58) 0.016(0.40)
0.118(3.00) TYP. 0.063(1.60) 0.055(1.40)
0.047(1.20) 0.035(0.90)
0.
Full PDF Text Transcription for CJA03N10-HF (Reference)
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MOSFET CJA03N10-HF N-Channel RoHS Device Halogen Free Features -Special process technology for high ESD capability. -High density cell design for extremely low RDS(ON). -...
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ESD capability. -High density cell design for extremely low RDS(ON). -Good stability and uniformity with high EAS. -Excellent package for good heat dissipation. 1 : Gate 2 : Drain 3 : Source SOT-89-3L 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. 0.102(2.60) 0.091(2.30) 123 0.167(4.25) 0.155(3.94) Circuit Diagram D G S 0.020(0.52) 0.013(0.32) 0.060(1.50) TYP. 0.023(0.58) 0.016(0.40) 0.118(3.00) TYP. 0.063(1.60) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.017(0.44) 0.014(0.
CJA03N10-HF Datasheet
