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CJD02N60 - N-Channel MOSFET

General Description

performance over time.

1.

GATE 2.

Key Features

  • z Robust High Voltage Termination z Avalanche Energy Specified z Sour.

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Datasheet Details

Part number CJD02N60
Manufacturer JCET
File Size 791.62 KB
Description N-Channel MOSFET
Datasheet download datasheet CJD02N60 Datasheet

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Full PDF Text Transcription for CJD02N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJD02N60. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX 4.4Ω@10V ID 2A TO-251S Gen...

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annel Power MOSFET V(BR)DSS 600V RDS(on)MAX 4.4Ω@10V ID 2A TO-251S General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withstand high energy in avalanche and commutation modes . The 3. SOURCE new energy efficient design also offers a drain-to-source diode with a 12 fast recovery time.