GENERAL DESCRIPTION
In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-251-3L 1. GATE 2. DRAIN 3. SOURCE FEATURE z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized fo
