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CJD02N60 - N-Channel Power MOSFET

Description

scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .

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Part number CJD02N60
Manufacturer ZPSEMI
File Size 676.87 KB
Description N-Channel Power MOSFET
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CJD02N60 TO-251-3L Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-251-3L 1.
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