CJD02N60
CJD02N60 is N-Channel MOSFET manufactured by JCET.
Description
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed
1. GATE 2. DRAIN to withstand high energy in avalanche and mutation modes . The 3. SOURCE new energy efficient design also offers a drain-to-source diode with a
12 fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z...
