Datasheet Details
| Part number | CJL6601 |
|---|---|
| Manufacturer | JCET |
| File Size | 109.34 KB |
| Description | P- & N-Channel MOSFET |
| Download | CJL6601 Download (PDF) |
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| Part number | CJL6601 |
|---|---|
| Manufacturer | JCET |
| File Size | 109.34 KB |
| Description | P- & N-Channel MOSFET |
| Download | CJL6601 Download (PDF) |
|
|
|
The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
SOT-23-6L Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage N-channel VDS 30 P-channel -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current(1) ID 3.4 -2.3 A Pulsed Drain Current (2) IDM 30 -30 A Power Dissipation PD 0.35 0.35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temperature Tstg -55~+150 -55~+150 ℃ 1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6601 P-channel and N-channel Complementary MOSFETS.
| Part Number | Description |
|---|---|
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| CJL8205 | Dual N-Channel MOSFET |
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