• Part: CJL6602
  • Description: P-channel and N-channel Complementary MOSFETS
  • Category: MOSFET
  • Manufacturer: JCET
  • Size: 1.17 MB
Download CJL6602 Datasheet PDF
JCET
CJL6602
CJL6602 is P-channel and N-channel Complementary MOSFETS manufactured by JCET.
DESCRIPTION The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The plementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. MARKING Equivalent Circuit L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-channel 30 Value P-channel -30 Unit V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.4 IDM 30 ±12 -2.3 -30 Power Dissipation PD 0.35 0.35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage...