Datasheet Details
| Part number | CJL6602 |
|---|---|
| Manufacturer | JCET |
| File Size | 1.17 MB |
| Description | P-channel and N-channel Complementary MOSFETS |
| Download | CJL6602 Download (PDF) |
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| Part number | CJL6602 |
|---|---|
| Manufacturer | JCET |
| File Size | 1.17 MB |
| Description | P-channel and N-channel Complementary MOSFETS |
| Download | CJL6602 Download (PDF) |
|
|
|
The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
MARKING Equivalent Circuit L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-channel 30 Value P-channel -30 Unit V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.4 IDM 30 ±12 -2.3 -30 V A A Power Dissipation PD 0.35 0.35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temp
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-channel V(BR)DSS -30V RDS(on)MAX 135 mΩ@-10V 185mΩ@-4.5V 265mΩ@-2.5V ID -2.3A N-channel V(BR)DSS 30V RDS(on)MAX 60mΩ@10V 75mΩ@4.5V 115mΩ@2.5V ID 3.
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