CJL6601
CJL6601 is P- & N-Channel MOSFET manufactured by JCET.
DESCRIPTION
The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The plementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
SOT-23-6L
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value Unit
Drain-Source Voltage
N-channel
P-channel
-30
Gate-Source Voltage
±12
±12
Continuous Drain Current(1)
-2.3
Pulsed Drain Current (2)
-30
Power Dissipation
Thermal Resistance from Junction to Ambient(1)
RθJA
℃/W
Junction Temperature
℃
Storage Temperature
Tstg
-55~+150
-55~+150...
