CJL6601 Datasheet PDF

JCET CJL6601

The CJL6601 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. The value in any given application depends on the user's specific board design.The current ratings is based on t≤10s thermal rasistance rating.

Part No.	CJL6601
Datasheet	CJL6601 Download
Manufacturer	JCET
Description	P- & N-Channel MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

SOT-23-6L

MAXIMUM RATINGS

(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage N-channel VDS 30 P-channel -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current(1) ID 3.4 -2.3 A Pulsed Drain Current (2) IDM 30 -30 A Power Dissipation PD 0.35 0.35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temperature Tstg -55~+150 -55~+150 ℃ 1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 2. Repetitive rating,pulse with limited by junction temperature. A -1,Jun,2012 N-channel MOSFET

ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise noted) Parameter Static characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-source leakage current (note1) Drain-source on-resistance (note1) Forward tranconductance (note1) Gate threshold voltage Diode forward voltage (note1) Dynamic...