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CJM1206 - P-Channel Power MOSFET

Description

excellent RDS(on) , low gate charge and operation with low gate voltage.

.

and a wide variety of other applications.

Features

  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge 0$5.,1.

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Datasheet Details

Part number CJM1206
Manufacturer JCET
File Size 967.56 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CJM1206 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J V(BR)DSS -12V RDS(on)MAX 45 mΩ@-4.5V  60 mΩ@-2.5V 90 mΩ@-1.8V ID -6A  1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. FEATURES  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge 0$5.
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