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CJU60N08 - N-Channel Power MOSFET

Description

The CJU60N08 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

applications.

1.

VDS =80V,ID =60A RDS(ON) < 8.5mΩ @ VGS=10V Good stability and

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Datasheet Details

Part number CJU60N08
Manufacturer JCET
File Size 850.82 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU60N08 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU60N08 V(BR)DSS N-Channel Power MOSFET RDS(on)MAX ID 80V 8.5mΩ@10V   60A   GENERAL DESCRIPTION The CJU60N08 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. TO-252-2L(4R) 1. GATE 2 2. DRAIN 1 3. SOURCE 3 FEATURE  VDS =80V,ID =60A  RDS(ON) < 8.
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