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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263 Plastic-Encapsulate MOSFETS
IRFB830 MOSFET( N-Channel )
FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement
TO-263
1. G 2. D 3. S
123
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
ID @TC=25℃ ID @TC=100℃ IDM
Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1)
PD Power Dissipation
RθJA VGS
Thermal Resistance from Junction to Ambient Gate-Souse Voltage
EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1)
EAR Repetitive Avalanche Energy (note 1)
dv/dt
Peak Diode Recovery dv/dt (note 3)
TJ Junction Temperature
Tstg Storage Temperature
Value 4.5 2.9 18 2 62.
IRFB830 Datasheet
