IRFB830
IRFB830 is MOSFET manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263 Plastic-Encapsulate MOSFETS
IRFB830 MOSFET( N-Channel )
Features
. Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement
TO-263
1. G 2. D 3. S
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
ID @TC=25℃ ID @TC=100℃ IDM
Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1)
PD Power Dissipation
RθJA VGS
Thermal Resistance from Junction to Ambient Gate-Souse Voltage
EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1)
EAR Repetitive Avalanche Energy (note 1) dv/dt
Peak...
